Manufacturing Issues of BEOL CMOS-MEMS Devices
نویسندگان
چکیده
In this paper we present a comprehensive report on the issues found during manufacturing of high-yield CMOS-MEMS sensors based vapor-phase hydrogen fluoride (vapor- HF) oxide etching. During study have identified main affecting regarding silicon as sacrificial material, passivation release mask, BEOL structural material for MEMS design and aluminum-sputtering sealing layer cavity. This has been carried out by systematically analyzing over 100 full wafers in 10 different runs four foundries using 0.5 ?m, 0.18 ?m 0.15 CMOS processes, containing both test structures full-sensor designs.
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ژورنال
عنوان ژورنال: IEEE Access
سال: 2021
ISSN: ['2169-3536']
DOI: https://doi.org/10.1109/access.2021.3086867